elektronische bauelemente SSY5829P -2.5 a, -20 v, r ds(on) 0.110 ? p-channel enhancement mosfet with schottky diode 14-jan-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. 1206-8cf rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers,pcmcia card s, cellular and cord less telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe 1206-8cf saves board space. ? fast switching speed. ? high performance trench technology. package information package mpq leadersize 1206-8cf 3k 7? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage (mosfet) v ds -20 v reverse voltage (schottky) v ka 20 v gate-source voltage (mosfet) v gs 8 v t a =25c -2.5 continuous drain current(t j =150c )(mosfet) 1 t a =70c i d -1.9 a pulsed drain current (mosfet) 2 i dm -10 a continuous source current (mosfet diode conduction) 1 i s -1.6 a average forward current (schottky) i f 0.5 a pulse forward current (schottky) i fm 8 a t a =25c 2.1 maximum power dissipation (mosfet) 1 t a =70c 1.1 t a =25c 1.3 maximum power dissipation (schottky) 1 t a =70c p d 0.68 w operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 5 sec 50 60 maximum junction to ambient 1 steady state r ja 90 110 c/w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millim eter millim eter ref. min. max. ref. min. max. a 2.00 2.10 m 0.08 0.25 b 3.00 3.05 a 1.70 1.73 c 3.00 3.05 b 0.24 0.35 d 0.65 0.70 l 0.20 0.40 e 1.95 2.00 l1 0 0.1 f 0.70 0.90 ? ? ? ? ? ? ? ? ? ? ? a a c c g s d d
elektronische bauelemente SSY5829P -2.5 a, -20 v, r ds(on) 0.110 ? p-channel enhancement mosfet with schottky diode 14-jan-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) -0.4 - - v v ds = v gs , i d = -250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 8v - - -1 v ds = -16v, v gs = 0v zero gate voltage drain current i dss - - -10 a v ds = -16v, v gs = 0v, t j =55 c on-state drain current 1 i d(on) -5 - - a v ds = -5v, v gs = -4.5v - - 0.110 v gs = -4.5v, i d = -3.6a drain-source on-state resistance 1 r ds(on) - - 0.160 ? v gs = -2.5v, i d = -3.0a forward transconductance 1 g fs - 3 - s v ds = -5v, , i d = -3.6a diode forward voltage v sd - -0.70 - v i s = -1.6a, v gs =0v dynamic 2 total gate charge q g - 6.0 - gate-source charge q gs - 0.80 - gate-drain charge q gd - 1.30 - nc i d = -3.6a v ds = -5v v gs = -4.5v turn-on delay time td (on) - 6.5 - rise time t r - 20 - turn-off delay time td (off) - 31 - fall time t f - 21 - ns v dd = -5v v gen = -4.5v r g = 6 ? r l = 5 ? schottky specifications (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions - - 0.48 if= 0.5a forward voltage drop 1 v f - - 0.4 v if= 0.5a, t j =125c - - 0.1 vr= 30v - - 1 vr= 30v, t j =75c maximum reverse leakage current i rm - - 10 ma vr= 30v, t j =125c junction capacitance c t - 31 - pf vr= 10v notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente SSY5829P -2.5 a, -20 v, r ds(on) 0.110 ? p-channel enhancement mosfet with schottky diode 14-jan-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SSY5829P -2.5 a, -20 v, r ds(on) 0.110 ? p-channel enhancement mosfet with schottky diode 14-jan-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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